High-voltage power MOS transistor is one of the most important components in electronic equipment. It usually has the characteristics of high voltage, high current, high frequency and high efficiency, and is widely used in high voltage and high power. In the application of high-voltage power MOS transistor, different withstand voltage values will correspond to different reaction speeds, and the product performance of high-voltage MOS transistor is closely related to its application scenarios. In this issue, Hottech recommends a commonly used high-voltage MOS tube HKTD4N65, which is widely used by customers in power supply, fast charging, inverter and battery protection.

Characteristics of HKTD4N65

Hottech HKTD4N65 tube is produced by Dongguan factory. It is a power MOS tube made of N-channel. It has very good electrical properties, with the maximum drain-source voltage of 650V, the maximum gate-source voltage of 30 V, the continuous drain current (also called the maximum drain-source current) of 4A, the drain-source on resistance of RDS (ON) of 2.22 Ω, and the minimum gate threshold voltage (turn-on voltage) of 2 V. HKTD4N65 adopts high-density battery design, which has excellent stability and uniformity. The product is made by special technology, which has good heat dissipation and stable and powerful performance. It has high switching speed, high withstand voltage characteristics, low gate charge to minimize conduction loss, good conductivity, minimum switching loss, all characteristics of avalanche voltage and current, and small size design is suitable for many electronic products.

Hottech's power MOS tube is packaged in TO-252, which has good heat dissipation performance, stable and reliable products, small space occupied by patch design, easy installation, high working efficiency and low thermal resistance, and the products should be widely used to meet the needs of high-power applications.

Application of HKTD4N65

This HKTD4N65 produced by Hottech can be used in electric tools, PD fast charging, power supply, drivers, motor controllers, frequency converters, adapters, inverters, battery protection boards, smart plug, intelligent sweeping robots, intelligent small household appliances and other products.

Excellent product characteristics determine its broad application fields. Hottech's high-voltage MOS transistor HKTD4N65 has high withstand voltage, which can withstand higher voltage and is suitable for high-voltage scenes such as switching power supply, energy storage, inverter and industrial robot. The fast response speed of HKTD4N65 makes it very suitable for switching circuits, with good switching performance and fast response speed. It is widely used in power supply, converter, motor drive, battery protection, fast charging and other applications.

The mainstream 65W fast charging products in the market are compatible with the latest PD3.0/QC3.0 fast charging, support the wide voltage of 100-240V, and have the functions of over-current, overload, over-voltage and temperature protection, which is also very demanding for discrete device products. For example, 65W fast charging products require switching MOS to withstand voltage between 600 V and 700 V, the mainstream is 650V, the switching speed is fast, and the mainstream of packaging is TO-252, etc. HKTD4N65 tube meets the market demand.

Customers need to consider many factors when selecting power MOS transistor, such as P transistor or N transistor, which should be selected according to the actual application. HKTD4N65 is an N-channel MOS transistor. In addition, temperature rise and thermal design are the most basic requirements for packaging selection. This product is TO-252 packaging, which has strong conductivity and heat dissipation ability.

For MOS selection, engineers should choose VDS(V), VGS (V), ID(A), RDS(ON) and so on according to the application scenarios and the characteristics of products. Many engineers care about RDSON because RDSON is directly related to conduction loss. The smaller RDSON, the smaller conduction loss of power MOS, the higher its efficiency and the lower its temperature rise. The switching characteristics, thermal design and check of MOS tube, avalanche energy and UIS, dv/dt10, the size of internal RG of other parameters, the working linear region of load switch and hot plug, SOA characteristics and EMI and other parameters. The right one is the best. I hope everyone can choose the most suitable power MOS transistor to make the product more powerful, stable and competitive in the market.